Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

By  

Journal of Semiconductors, Vol. 35, Iss. 12, 2014-12 ,pp. : 124003-124006

IOP Publishing

Access to resources Recommend Favorite

Thermally Oxidized InAlN of Different Compositions for InAlN/GaN Heterostructure Field-Effect Transistors

By Kordoš P.  

Journal of Electronic Materials, Vol. 41, Iss. 11, 2012-11 ,pp. : 3013-3016

Springer Publishing Company

Access to resources Recommend Favorite

AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates

By Witte W.   Reuters B.   Fahle D.   Behmenburg H.   Wang K.R.   Trampert A.   Holländer B.   Hahn H.   Kalisch H.   Heuken M.   Vescan A.  

Semiconductor Science and Technology, Vol. 28, Iss. 8, 2013-08 ,pp. : 85006-85011

IOP Publishing

Access to resources Recommend Favorite

Large periphery AlInN/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors on sapphire substrate

By Sultana M   Muhtadi S   Lachab M   Adivarahan V   Khan A  

Semiconductor Science and Technology, Vol. 29, Iss. 11, 2014-11 ,pp. : 115031-115036

IOP Publishing

Access to resources Recommend Favorite

Metal-oxide-semiconductor AlGaN/GaN heterostructure field-effect transistors using TiN/AlO stack gate layer deposited by reactive sputtering

By  

Semiconductor Science and Technology, Vol. 30, Iss. 1, 2015-01 ,pp. : 15019-15024

IOP Publishing

Access to resources Recommend Favorite