Related content

Improved crystal quality of GaN film with the in-plane lattice-matched In_0.17Al_0.83N interlayer grown on sapphire substrate using pulsed metal—organic chemical vapor deposition

By Liang Li   Lin-An Yang   Jun-Shuai Xue   Rong-Tao Cao   Sheng-Rui Xu   Jin-Cheng Zhang   Yue Hao  

Chinese Physics B, Vol. 23, Iss. 6, 2014-06 ,pp. : 67103-67108

IOP Publishing

Access to resources Recommend Favorite

Electronic structures and optical properties of GaN and ZnO nanowires from first principles

By  

Journal of Physics: Conference Series , Vol. 100, Iss. 5, 2008-03 ,pp. : 228-231

IOP Publishing

Access to resources Recommend Favorite

Properties of GaN layers deposited on AlN/sapphire template substrates

By  

Journal of Physics: Conference Series , Vol. 146, Iss. 1, 2009-01 ,pp. : 61-66

IOP Publishing

Access to resources Recommend Favorite

The effects of growth temperature of AlN buffer layers on a-plane GaN grown on r-plane sapphire by MOCVD

By  

Journal of Physics: Conference Series , Vol. 276, Iss. 1, 2011-02 ,pp. : 1180-1187

IOP Publishing

Access to resources Recommend Favorite

Electron transport properties in m-plane and c-plane AlN/GaN heterostructures with interface roughness and anisotropic in-plane strain scatterings

By  

Journal of Physics D: Applied Physics, Vol. 48, Iss. 8, 2015-03 ,pp. : 85301-85305

IOP Publishing

Access to resources Recommend Favorite