Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs

Author： Martin-Horcajo S Wang A Romero M F Tadjer M J Koehler A D Anderson T J Calle F

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.11, 2014-11, pp. : 115013-115021

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