ESD robustness concern and optimization for high-voltage p-type LDMOS transistor with thin gate oxide used as the output driver

Author： Liu Siyang Wang Hao Ye Ran Zhang Chunwei Sun Weifeng

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.11, 2014-11, pp. : 115004-115010

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