Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs

Author: Simoen E   Federico A   Aoulaiche M   Ritzenthaler R   Schram T   Arimura H   Cho M   Kauerauf T   Groeseneken G   Horiguchi N   Thean A   Crupi F   Spessot A   Caillat C   Fazan P   Na H-J   Son Y   Noh K B  

Publisher: IOP Publishing

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.29, Iss.11, 2014-11, pp. : 115015-115022

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