Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps

By Fang Zhong-Hui   Jiang Xiao-Fan   Chen Kun-Ji   Yue-Fei Wang   Wei Li   Jun Xu  

Chinese Physics B, Vol. 24, Iss. 1, 2015-01 ,pp. : 17305-17309

IOP Publishing

Access to resources Recommend Favorite

Excitation efficiency and saturation dynamics of near-infrared emission from Si nanocrystals embedded in a SiO2-matrix

By  

Journal of Physics: Conference Series , Vol. 165, Iss. 1, 2009-05 ,pp. : 87-92

IOP Publishing

Access to resources Recommend Favorite

The nature and mechanism of charging of electron traps in Lu₂SiO₅:Ce³⁺ crystals

By Znamenskii N.   Manykin E.   Petrenko E.   Yukina T.   Malyukin Yu.   Zhmurin P.   Grinev B.   Masalov A.   Shpak A.  

Journal of Experimental and Theoretical Physics, Vol. 99, Iss. 2, 2004-08 ,pp. : 386-393

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Effect of coalescence and of the character of the initial oxide on the photoluminescence of ion-synthesized Si nanocrystals in SiO₂

By Tetelbaum D.   Gorshkov O.   Kasatkin A.   Mikhaylov A.   Belov A.   Gaponova D.   Morozov S.  

Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. : 13-17

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

From ab initio properties of the Si-SiO2 interface, to electrical characteristics of metal-oxide-semiconductor devices

By  

Journal of Physics: Conference Series , Vol. 242, Iss. 1, 2010-07 ,pp. : 49-52

IOP Publishing

Access to resources Recommend Favorite