Cu-doped GaN grown by molecular beam epitaxy

By  

Journal of Physics: Conference Series , Vol. 200, Iss. 6, 2010-01 ,pp. : 21-24

IOP Publishing

Access to resources Recommend Favorite

Effects of substrate nitridation time on the thermal properties of GaN films grown on silicon by molecular beam epitaxy

By  

Le Journal de Physique IV, Vol. 125, Iss. issue, 2005-06 ,pp. : 205-208

Edp Sciences

Access to resources Recommend Favorite

Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

By Mamutin V.   Ulin V.   Tret’yakov V.   Ivanov S.   Konnikov S.   Kop’ev P.  

Technical Physics Letters, Vol. 25, Iss. 1, 1999-01 ,pp. : 1-3

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy

By Mamutin V.   Cherkashin N.   Vekshin V.   Zhmerik V.   Ivanov S.  

Physics of the Solid State, Vol. 43, Iss. 1, 2001-01 ,pp. : 151-156

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Molecular beam epitaxy of (Al)GaAsN using ammonia as a source of nitrogen

By Odnoblyudov V.   Kovsh A.   Zhukov A.   Egorov A.   Maleev N.   Mikhrin S.   Ustinov V.  

Technical Physics Letters, Vol. 28, Iss. 6, 2002-06 ,pp. : 517-520

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite