Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon

By Qinghua Mao   Junlin Liu   Xiaoming Wu   Jianli Zhang   Chuanbing Xiong   Chunlan Mo   Meng Zhang   Fengyi Jiang  

Journal of Semiconductors, Vol. 36, Iss. 9, 2015-09 ,pp. : 93003-93006

IOP Publishing

Access to resources Recommend Favorite

The Effect of Growth Pressure and Growth Rate on the Properties of Mg-Doped GaN

By Fu Binglei   Liu Naixin   Zhang Ning   Si Zhao   Wei Xuecheng   Wang Xiaodong   Lu Hongxi   Liu Zhe   Wei Tongbo   Yi Xiaoyan   Li Jinmin   Wang Junxi  

Journal of Electronic Materials, Vol. 43, Iss. 4, 2014-04 ,pp. : 1244-1248

Springer Publishing Company

Access to resources Recommend Favorite

Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy

By Yablonskii G.   Gurskii A.   Lutsenko E.   Marko I.   Schineller B.   Guttzeit A.   Schön O.   Heuken M.   Heime K.   Beccard R.   Schmitz D.   Juergensen H.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 222-228

Springer Publishing Company

Access to resources Recommend Favorite

Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratio

By Nakadaira Atsushi   Tanaka Hidenao  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 320-324

Springer Publishing Company

Access to resources Recommend Favorite

Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates

By Wang Kun   Pavlidis Dimitris   Cao Jun  

Journal of Electronic Materials, Vol. 26, Iss. 1, 1997-12 ,pp. : 1-6

Springer Publishing Company

Access to resources Recommend Favorite