Physical limitations for homogeneous and highly doped n-type emitter monocrystalline silicon solar cells

By Stem N.   Cid M.  

Solid-State Electronics, Vol. 48, Iss. 2, 2004-02 ,pp. : 197-205

Elsevier

Access to resources Recommend Favorite

Hopping conduction in heavily doped bulk n-type SiC

By Mitchel W.   Evwaeaye A.   Smith S.   Roth M.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 113-118

Springer Publishing Company

Access to resources Recommend Favorite

Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells

By Cappelletti M.A.   Casas G.A.   Cédola A.P.   Blancá E L Peltzer y.  

Semiconductor Science and Technology, Vol. 28, Iss. 4, 2013-04 ,pp. : 45010-45016

IOP Publishing

Access to resources Recommend Favorite

Variable range hopping conduction in N- and P-type in situ doped polycrystalline silicon nanowires

By Pichon L   Jacques E   Rogel R   Salaun A C   Demami F  

Semiconductor Science and Technology, Vol. 28, Iss. 2, 2013-02 ,pp. : 25002-25007

IOP Publishing

Access to resources Recommend Favorite

Effects of reduction temperature on the optoelectronic properties of diodes based on n-type Si and reduced graphene oxide doped with a conductive polymer

By Zeng Jian-Jhou   Ruan Cheng-He   Lin Jian-Huang   Lin Yow-Jon  

Semiconductor Science and Technology, Vol. 28, Iss. 6, 2013-06 ,pp. : 65008-65012

IOP Publishing

Access to resources Recommend Favorite