High-frequency noise analysis of Si/SiGe heterojunction bipolar transistors

By Herzel Frank   Heinemann Bernd  

International Journal of Electronics, Vol. 81, Iss. 1, 1996-07 ,pp. : 37-48

Taylor & Francis Ltd

Access to resources Recommend Favorite

An equivalent heterojunction-like model for polysilicon emitter bipolar transistor

By Jin H.-Y.   Zhang L.-C.   Gao Y.-Z.   Ye H.-F.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1719-1727

Elsevier

Access to resources Recommend Favorite

An Analytic Model of Web Servers in Distributed Computing Environments

By Reeser P.   Hariharan R.  

Telecommunication Systems, Vol. 21, Iss. 2-4, 2002-12 ,pp. : 283-299

Springer Publishing Company

Access to resources Recommend Favorite

On the frequency-dependent line capacitance and conductance of on-chip interconnects on lossy silicon substrate

By Ymeri H.   Nauwelaers B.   Maex K.  

Microelectronics International, Vol. 19, Iss. 1, 2002-04 ,pp. : 11-18

Emerald Group Publishing Ltd

Access to resources Recommend Favorite

Effect of bandgap discontinuity on the cut-off frequency, base transit time and junction capacitance of npn AlGaAs/GaAs heterojunction bipolar transistors

By Qasaimeh Omar   Zebda Yousef  

International Journal of Electronics, Vol. 84, Iss. 1, 1998-01 ,pp. : 25-36

Taylor & Francis Ltd

Access to resources Recommend Favorite