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Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates
Publisher: IOP Publishing
E-ISSN: 1361-6641|30|3|35023-35031
ISSN: 0268-1242
Source: Semiconductor Science and Technology, Vol.30, Iss.3, 2015-03, pp. : 35023-35031
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
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