Effect of O 2 /CHF 3 plasma treatment on n-type GaN grown on sapphire by MOCVD

Author： Qin Z.X.   Chen Z.Z.   Zhang H.X.   Ding X.M.   Hu X.D.   Yu T.J.   Tong Y.Z.   Zhang G.Y.  

Publisher： Elsevier

ISSN： 1369-8001

Source： Materials Science in Semiconductor Processing, Vol.5, Iss.6, 2002-12, pp. : 473-475

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