Electronic transport of Au/(Ca_1.9Pr_0.1Co₄O_x)/n-Si structures analysed over a wide temperature range

By Alialy S.   Kaya A.   Marıl E.   Altındal Ş.   Uslu İ.  

Philosophical Magazine, Vol. 95, Iss. 13, 2015-05 ,pp. : 1448-1461

Taylor & Francis Ltd

Access to resources Recommend Favorite

Effect of alloying temperature on the capacitance–voltage and current–voltage characteristics of low‐pressure chemical vapor deposition SiNx/n‐GaN MIS structures

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 12, 2015-12 ,pp. : 2928-2935

John Wiley & Sons Inc

Access to resources Recommend Favorite

IN SITU CURRENT-VOLTAGE CHARACTERIZATION OF SWIFT HEAVY ION IRRADIATED Au/n-GaAs SCHOTTKY DIODE AT LOW TEMPERATURE

By SINGH R.   ARORA S. K.   SINGH J. P.   KANJILAL D.  

Radiation Effects and Defects in Solids, Vol. 157, Iss. 4, 2002-01 ,pp. : 367-374

Taylor & Francis Ltd

Access to resources Recommend Favorite

The Influence of Resistance of the Epitaxial-Film Volume on the Capacity-Voltage Characteristics of the HgCdTe/AOF and HgCdTe/SiO₂/Si₃N₄ MIS Structures

By Voitsekhovskii A.   Nesmelov S.   Dzyadukh S.  

Russian Physics Journal, Vol. 48, Iss. 6, 2005-06 ,pp. : 584-591

Springer Publishing Company

Access to resources Recommend Favorite

Anomalous Scatter of Forward Current-Voltage Characteristics of He⁺-Irradiated Ni/4H-SiC Schottky Diodes

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 749-752

Trans Tech Publications

Access to resources Recommend Favorite