Factors influencing epitaxial growth of three-dimensional Ge quantum dot crystals on pit-patterned Si substrate

By J Y   Zhong Z   Yang X J   Fan Y L   Jiang Z M  

Nanotechnology, Vol. 24, Iss. 1, 2013-01 ,pp. : 15304-15310

IOP Publishing

Access to resources Recommend Favorite

Production of three-dimensional quantum dot lattice of Ge/Si core–shell quantum dots and Si/Ge layers in an alumina glass matrix

By Buljan M   Radić N   Sancho-Paramon J   Janicki V   Grenzer J   Bogdanović-Radović I   Siketić Z   Ivanda M   Utrobičić A   Hübner R   Weidauer R   Valeš V   Endres J   Car T   Jerčinović M   Roško J   Bernstorff S   Holy V  

Nanotechnology, Vol. 26, Iss. 6, 2015-02 ,pp. : 65602-65610

IOP Publishing

Access to resources Recommend Favorite

Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition

By  

Nanotechnology, Vol. 26, Iss. 10, 2015-03 ,pp. : 105201-105209

IOP Publishing

Access to resources Recommend Favorite

Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams

By Nakajima Kazuo   Azuma Yukinaga   Usami Noritaka   Sazaki Gen   Ujihara Toru   Fujiwara Kozo   Shishido Toetsu   Nishijima Yoshito   Kusunoki Toshihiro  

International Journal of Materials and Product Technology, Vol. 22, Iss. 1-2, 2004-11 ,pp. : 185-212

Inderscience Publishers

Access to resources Recommend Favorite

Fabrication of SiGe quantum wires and dots by low pressure chemical vapour deposition on patterned silicon substrates

By Hartmann A.   Vescan L.   Dieker C.   Lüth H.  

Materials Science and Technology, Vol. 11, Iss. 4, 1995-04 ,pp. : 410-415

Maney Publishing

Access to resources Recommend Favorite