A 320 mV, 6 kb subthreshold 10T SRAM employing voltage lowering techniques

Author： Jiangzheng Cai Sumin Zhang Jia Yuan Xinchao Shang Liming Chen Yong Hei

ISSN： 1674-4926

Source： Journal of Semiconductors, Vol.36, Iss.6, 2015-06, pp. : 65007-65012

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