

Author: Yingping Chen Zhiqian Li
Publisher: IOP Publishing
ISSN: 1674-4926
Source: Journal of Semiconductors, Vol.36, Iss.5, 2015-05, pp. : 55004-55010
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content




By Pey K.L. Tung C.H. Radhakrishnan M.K. Tang L.J. Sun Y. Wang X.D. Lin W.H.
Microelectronics Reliability, Vol. 43, Iss. 9, 2003-09 ,pp. :






By Choudhury Abhijit Chatterjee Kishore
International Journal of Power Electronics, Vol. 4, Iss. 6, 2012-03 ,pp. :