Gas mixture influence on the reactive ion etching of InSb in an inductively coupled methane-hydrogen plasma

Author： Abautret J   Evirgen A   Perez J P   Laaroussi Y   Cordat A   Boulard F   Christol P  

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|6|65014-65022

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.6, 2015-06, pp. : 65014-65022

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