Analytical solution of fundamental surface potential equations for symmetric double-gate metal-oxide-semiconductor field-effect transistors

By Chang Sheng  

International Journal of Electronics, Vol. 96, Iss. 10, 2009-10 ,pp. : 1023-1038

Taylor & Francis Ltd

Access to resources Recommend Favorite

Large periphery AlInN/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors on sapphire substrate

By Sultana M   Muhtadi S   Lachab M   Adivarahan V   Khan A  

Semiconductor Science and Technology, Vol. 29, Iss. 11, 2014-11 ,pp. : 115031-115036

IOP Publishing

Access to resources Recommend Favorite

Metal-oxide-semiconductor AlGaN/GaN heterostructure field-effect transistors using TiN/AlO stack gate layer deposited by reactive sputtering

By  

Semiconductor Science and Technology, Vol. 30, Iss. 1, 2015-01 ,pp. : 15019-15024

IOP Publishing

Access to resources Recommend Favorite

New Simulation Method to Characterize the Recoverable Component of Dynamic Negative-Bias Temperature Instability in p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

By Hussin H.   Soin N.   Bukhori M.F.   Abdul Wahab Y.   Shahabuddin S.  

Journal of Electronic Materials, Vol. 43, Iss. 4, 2014-04 ,pp. : 1207-1213

Springer Publishing Company

Access to resources Recommend Favorite

Two-dimensional modelling for the current density distribution in a heavily doped semiconductor resistor

By Kim J. D.   Koo J. G.   Nam K. S.  

International Journal of Electronics, Vol. 82, Iss. 1, 1997-01 ,pp. : 19-26

Taylor & Francis Ltd

Access to resources Recommend Favorite