Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes

Publisher： John Wiley & Sons Inc

E-ISSN： 1862-6319|212|5|947-953

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.5, 2015-05, pp. : 947-953

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