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John Wiley & Sons Inc

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Growth and characterisation of GaN epitaxial layers

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Changes in the microstructure of GaN layers on sapphire upon annealing at high pressure

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Reactive ion (N + 2 ) beam pretreatment of sapphire for GaN growth

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Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties

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