Growth of GaN on sapphire via low‐temperature deposited buffer layer and realization of p‐type GaN by Mg doping followed by low‐energy electron beam irradiation (Nobel Lecture)

Publisher： John Wiley & Sons Inc

E-ISSN： 1521-3889|527|5-6|327-333

ISSN： 0003-3804

Source： ANNALEN DER PHYSIK, Vol.527, Iss.5-6, 2015-06, pp. : 327-333

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