In‐grown stacking‐faults in 4H‐SiC epilayers grown on 2° off‐cut substrates

Publisher: John Wiley & Sons Inc

E-ISSN: 1521-3951|252|6|1319-1324

ISSN: 0370-1972

Source: PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol.252, Iss.6, 2015-06, pp. : 1319-1324

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Abstract