Local compressive stress generation in electron irradiated boron‐doped Si0.75Ge0.25/Si devices

Publisher: John Wiley & Sons Inc

E-ISSN: 1610-1642|9|10‐11|2058-2061

ISSN: 1862-6351

Source: PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.9, Iss.10‐11, 2012-10, pp. : 2058-2061

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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Abstract