Characterization of dislocations in germanium layers grown on (011)‐ and (111)‐oriented silicon by coplanar and noncoplanar X‐ray diffraction
Publisher: John Wiley & Sons Inc
E-ISSN: 1600-5767|48|3|655-665
ISSN: 0021-8898
Source: JOURNAL OF APPLIED CRYSTALLOGRAPHY (ELECTRONIC), Vol.48, Iss.3, 2015-06, pp. : 655-665
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Abstract