Graphene‐Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices

E-ISSN： 1521-4095|27|40|6202-6207

ISSN： 0935-9648

Source： ADVANCED MATERIALS, Vol.27, Iss.40, 2015-10, pp. : 6202-6207

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Processes and Effects of Oxygen and Moisture in Resistively Switching TaO_x and HfO_x

ADVANCED ELECTRONIC MATERIALS, Vol. 4, Iss. 1, 2018-01 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite

Effects of W/Ir Top Electrode on Resistive Switching and Dopamine Sensing by Using Optimized TaO_x‐Based Memory Platform

ADVANCED MATERIALS INTERFACES (ELECTRONIC), Vol. 4, Iss. 24, 2017-12 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite

Dynamic moderation of an electric field using a SiO2 switching layer in TaOx ‐based ReRAM

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol. 9, Iss. 3, 2015-03 ,pp. : 166-170

John Wiley & Sons Inc

Access to resources Recommend Favorite

Self‐Limited Switching in Ta2O5/TaOx Memristors Exhibiting Uniform Multilevel Changes in Resistance

ADVANCED FUNCTIONAL MATERIALS, Vol. 25, Iss. 10, 2015-03 ,pp. : 1527-1534

John Wiley & Sons Inc

Access to resources Recommend Favorite

Switching Kinetic of VCM‐Based Memristor: Evolution and Positioning of Nanofilament

ADVANCED MATERIALS, Vol. 27, Iss. 34, 2015-09 ,pp. : 5028-5033

John Wiley & Sons Inc

Access to resources Recommend Favorite