Physical model for the evolution of the defect system of silicon carbide with allowance for the internal elastic stress fields during implantation of Al+ and N+ and subsequent annealing

Author： Kulikov D.   Trushin Yu.   Rybin P.   Kharlamov V.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7842

Source： Technical Physics, Vol.44, Iss.10, 1999-10, pp. : 1168-1174

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