Related content

Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

By Mamutin V.   Ulin V.   Tret’yakov V.   Ivanov S.   Konnikov S.   Kop’ev P.  

Technical Physics Letters, Vol. 25, Iss. 1, 1999-01 ,pp. : 1-3

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

By Mamutin V.   Zhmerik V.   Shubina T.   Toropov A.   Lebedev A.   Vekshin V.   Ivanov S.   Kop’ev P.  

Technical Physics Letters, Vol. 24, Iss. 6, 1998-06 ,pp. : 467-469

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Molecular-beam epitaxy growth and characterization of 5-μm quantum cascade laser

By  

Journal of Physics: Conference Series , Vol. 291, Iss. 1, 2011-04 ,pp. : 46-52

IOP Publishing

Access to resources Recommend Favorite

GaN film growth on LiNbO3 surfaces using molecular beam epitaxy

By  

Journal of Physics: Conference Series , Vol. 187, Iss. 1, 2009-09 ,pp. : 96-101

IOP Publishing

Access to resources Recommend Favorite

Effect of growth conditions on photoluminescence of erbium-doped silicon layers grown using sublimation molecular-beam epitaxy

By Shengurov V.   Svetlov S.   Chalkov V.   Andreev B.   Krasil’nik Z.   Kryzhkov D.  

Physics of the Solid State, Vol. 46, Iss. 1, 2004-01 ,pp. : 101-103

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite