Mechanism of misfit stress relaxation during epitaxial growth of GaN on porous SiC substrates

Author: Mynbaeva M.   Konstantinov O.   Mynbaev K.   Romanov A.   Sitnikova A.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7850

Source: Technical Physics Letters, Vol.32, Iss.12, 2006-12, pp. : 1011-1013

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