Related content

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

By Hui-Min Qian   Guang Yu   Hai Lu   Chen-Fei Wu   Lan-Feng Tang   Dong Zhou   Fang-Fang Ren   Rong Zhang   You-Liao Zheng   Xiao-Ming Huang  

Chinese Physics B, Vol. 24, Iss. 7, 2015-07 ,pp. : 77307-77311

IOP Publishing

Access to resources Recommend Favorite

The effect of a zinc–tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors

By      

Journal of Physics D: Applied Physics, Vol. 47, Iss. 38, 2014-09 ,pp. : 385104-385110

IOP Publishing

Access to resources Recommend Favorite

Negative Bias Temperature Instability “Recovery" under Negative Stress Voltage with Different Oxide Thicknesses

By Yan-Rong Cao   Xiao-Hua Ma   Yue Hao   Min-Bo Zhu   Wen-Chao Tian   Yue Zhang  

Chinese Physics Letters, Vol. 28, Iss. 1, 2011-01 ,pp. : 17301-17304

IOP Publishing

Access to resources Recommend Favorite

Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects

By Pourtois G   Genoe J   Heremans P   Pourtois G  

Journal of Physics D: Applied Physics, Vol. 48, Iss. 43, 2015-11 ,pp. : 435104-435113

IOP Publishing

Access to resources Recommend Favorite

The impact of thermal treatment conditions on the formation of crystalline structure of Ce-Zr-oxide composite obtained by a modified sol-gel technique

By  

Journal of Physics: Conference Series , Vol. 345, Iss. 1, 2012-02 ,pp. : 239-242

IOP Publishing

Access to resources Recommend Favorite