Design considerations for II–VI multi-gate transistors: the case of cadmium sulfide

Author： Conde J   Mejia I   Aguirre-Tostado F S   Young C   Quevedo-Lopez M A  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.4, 2014-04, pp. : 45006-45011

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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