Related content

Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene–graphene composite layers for flexible thin film transistors with a polymer gate dielectric

By Basu Sarbani   Adriyanto Feri   Wang Yeong-Her  

Nanotechnology, Vol. 25, Iss. 8, 2014-02 ,pp. : 85201-85211

IOP Publishing

Access to resources Recommend Favorite

High performance tunnel field-effect transistor by gate and source engineering

By  

Nanotechnology, Vol. 25, Iss. 50, 2014-12 ,pp. : 505201-505208

IOP Publishing

Access to resources Recommend Favorite

Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS₂ field-effect transistors

By Cho Kyungjune   Kim Tae-Young   Park Woanseo   Park Juhun   Kim Dongku   Jang Jingon   Jeong Hyunhak   Hong Seunghun   Lee Takhee  

Nanotechnology, Vol. 25, Iss. 15, 2014-04 ,pp. : 155201-155207

IOP Publishing

Access to resources Recommend Favorite

THE FABRICATION AND CHARACTERIZATION OF METAL-OXIDE-SILICON CAPACITORS AND FIELD-EFFECT TRANSISTORS USING Dy2O3 AND Sm2O3 GATE DIELECTRICS

By Hwang Yu-Ren   Chang Ingram Yin-ku   Wang Ming-tsong   Lee Joseph Ya-min  

Integrated Ferroelectrics, Vol. 97, Iss. 1, 2008-01 ,pp. : 111-120

Taylor & Francis Ltd

Access to resources Recommend Favorite

Ultrahigh near infrared photoresponsive organic field-effect transistors with lead phthalocyanine/C₆₀ heterojunction on poly(vinyl alcohol) gate dielectric

By Sun Lei   Zhang Jianping   Zhao Feiyu   Luo Xiao   Lv Wenli   li Yao   Ren Qiang   Wen Zhanwei   Peng Yingquan   Liu Xingyuan  

Nanotechnology, Vol. 26, Iss. 18, 2015-05 ,pp. : 185501-185510

IOP Publishing

Access to resources Recommend Favorite