Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

Author: Cong Li   Yi-Qi Zhuang   Li Zhang   Gang Jin  

Publisher: IOP Publishing

ISSN: 1674-1056

Source: Chinese Physics B, Vol.23, Iss.1, 2014-01, pp. : 18501-18506

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next