Two crucial factors influencing quality of GaAs on Ge substrate

Author： Chuang Deng Chuan-Ling Men Da Chen

ISSN： 1674-1056

Source： Chinese Physics B, Vol.23, Iss.4, 2014-04, pp. : 46805-46808

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

Chinese Physics Letters, Vol. 31, Iss. 12, 2014-12 ,pp. : 128101-128105

IOP Publishing

Access to resources Recommend Favorite

Substrate and interface effects in GaAs fet's

Revue de Physique Appliquée (Paris), Vol. 13, Iss. 12, 1978-12 ,pp. : 655-659

Edp Sciences

Access to resources Recommend Favorite

MBE growth and optical properties of GaAs nanowires grown on Si(111) substrate using two-temperature steps regime

Journal of Physics: Conference Series , Vol. 643, Iss. 1, 2015-11 ,pp. : 21-24

IOP Publishing

Access to resources Recommend Favorite

Multilayers of GaAs/Mn deposited on a substrate of GaAs (001)

Journal of Physics: Conference Series , Vol. 167, Iss. 1, 2009-05 ,pp. : 110-114

IOP Publishing

Access to resources Recommend Favorite

NON-ALLOYED Ge/Pd OHMIC CONTACT FOR GaAs MESFET'S

Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. : C4-441-C4-444

Edp Sciences

Access to resources Recommend Favorite