Related content

Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate

By  

Semiconductor Science and Technology, Vol. 30, Iss. 12, 2015-12 ,pp. : 125005-125014

IOP Publishing

Access to resources Recommend Favorite

Effects of oxygen plasma treatment on V _th uniformity of recessed-gate AlGaN/GaN HEMTs

By Hong Ki-Ha   Choi Hyuk   Hwang Injun   Kim Jongseob  

Electronic Materials Letters, Vol. 10, Iss. 2, 2014-03 ,pp. : 363-367

Springer Publishing Company

Access to resources Recommend Favorite

High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO₂ gate insulators

By Seok Ogyun   Ahn Woojin   Han Min-Koo   Ha Min-Woo  

Semiconductor Science and Technology, Vol. 28, Iss. 2, 2013-02 ,pp. : 25001-25006

IOP Publishing

Access to resources Recommend Favorite

Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT

By Kaushik J K   Balakrishnan V R   Panwar B S   Muralidharan R  

Semiconductor Science and Technology, Vol. 28, Iss. 1, 2013-01 ,pp. : 15026-15031

IOP Publishing

Access to resources Recommend Favorite

Performance analysis of silicon nanowire transistors considering effective oxide thickness of high-k gate dielectric

By Chandra S. Theodore   Balamurugan N. B.  

Journal of Semiconductors, Vol. 35, Iss. 4, 2014-04 ,pp. : 44001-44004

IOP Publishing

Access to resources Recommend Favorite