Related content

Electron transfer during metal-assisted and stain etching of silicon

By Kolasinski Kurt W  

Semiconductor Science and Technology, Vol. 31, Iss. 1, 2016-01 ,pp. : 14002-14010

IOP Publishing

Access to resources Recommend Favorite

Mesoporosity in doped silicon nanowires from metal assisted chemical etching monitored by phonon scattering

By McSweeney William   Glynn Colm   Geaney Hugh   Collins Gillian   Holmes Justin D   O’Dwyer Colm  

Semiconductor Science and Technology, Vol. 31, Iss. 1, 2016-01 ,pp. : 14003-14015

IOP Publishing

Access to resources Recommend Favorite

Catalyst and processing effects on metal-assisted chemical etching for the production of highly porous GaN

By Geng Xuewen   Duan Barrett K.   Grismer Dane A.   Zhao Liancheng   Bohn Paul W.  

Semiconductor Science and Technology, Vol. 28, Iss. 6, 2013-06 ,pp. : 65001-65010

IOP Publishing

Access to resources Recommend Favorite

Plasma-Assisted Diffusion Doping of Porous-Silicon Films

By Kovalevskii A. A.   Glukhmanchuk V. V.   Tarasikov M. V.   Sorokin V. M.  

Russian Microelectronics, Vol. 33, Iss. 1, 2004-01 ,pp. : 13-17

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Etching of Silicon Carbide for Device Fabrication and through Via-Hole Formation

By Khan F.A.   Roof B.   Zhou L.   Adesida I.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 212-219

Springer Publishing Company

Access to resources Recommend Favorite