Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

Author: Mukhopadhyay Partha   Bag Ankush   Gomes Umesh   Banerjee Utsav   Ghosh Saptarsi   Kabi Sanjib   Chang Edward   Dabiran Amir   Chow Peter   Biswas Dhrubes  

Publisher: Springer Publishing Company

ISSN: 1543-186X

Source: Journal of Electronic Materials, Vol.43, Iss.4, 2014-04, pp. : 1263-1270

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