High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate

Author： Zhang Jianli   Xiong Chuanbing   Liu Junlin   Quan Zhijue   Wang Li   Jiang Fengyi  

Publisher： Springer Publishing Company

ISSN： 0947-8396

Source： Applied Physics A, Vol.114, Iss.4, 2014-03, pp. : 1049-1053

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