Related content

Improvement of vertical light extraction from GaN‐based LEDs on moth‐eye patterned sapphire substrates

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 935-940

John Wiley & Sons Inc

Access to resources Recommend Favorite

Advantages of blue InGaN light-emitting diodes without an electron-blocking layer by using AlGaN step-like barriers

By Xiong Jian-Yong   Xu Yi-Qin   Zheng Shu-Wen   Fan Guang-Han   Zhang Tao  

Applied Physics A, Vol. 114, Iss. 2, 2014-02 ,pp. : 309-313

Springer Publishing Company

Access to resources Recommend Favorite

Improved hole distribution in InGaN light‐emitting diodes with InGaN–GaN barriers of decreasing indium composition

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 8, 2015-08 ,pp. : 1805-1809

John Wiley & Sons Inc

Access to resources Recommend Favorite

Efficiency droop and carrier transport in AlGaN epilayers and heterostructures

By  

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 252, Iss. 5, 2015-05 ,pp. : 961-964

John Wiley & Sons Inc

Access to resources Recommend Favorite

Optical excitation study on the efficiency droop behaviors of InGaN/GaN multiple-quantum-well structures

By Sun Yuanping   Guo Hongying   Jin Lihua   Cho Yong-Hoon   Suh E.-K.   Lee H.   Choi R.   Hahn Y.  

Applied Physics B, Vol. 114, Iss. 4, 2014-03 ,pp. : 551-555

Springer Publishing Company

Access to resources Recommend Favorite