Related content

Distribution of Au atom number in the Au agglomerates generated during the out-diffusion process of supersaturated high-temperature substitutional Au in Si at 900 °C

By Morooka Masami  

Journal of Materials Science: Materials in Electronics, Vol. 22, Iss. 4, 2011-04 ,pp. : 412-417

Springer Publishing Company

Access to resources Recommend Favorite

Silicide formation of Au thin films on (100) Si during annealing

By Chang J.F.   Young T.F.   Yang Y.L.   Ueng H.Y.   Chang T.C.  

Materials Chemistry and Physics, Vol. 83, Iss. 2, 2004-02 ,pp. : 199-203

Elsevier

Access to resources Recommend Favorite

Formation of intermetallic compound layers in Sn/Au/Sn diffusion couple during annealing at 433 K

By Yamada T.   Miura K.   Kajihara M.   Kurokawa N.   Sakamoto K.  

Journal of Materials Science, Vol. 39, Iss. 7, 2004-04 ,pp. : 2327-2334

Springer Publishing Company

Access to resources Recommend Favorite

Fabrication of nanoscale heterojunction of Si/Au and Si/Ag by surface droplet epitaxy

By Wakayama Y.   Tanaka S.-i.  

Nanostructured Materials, Vol. 12, Iss. 1, 1999-01 ,pp. : 13-18

Elsevier

Access to resources Recommend Favorite

The influence of rapid thermal annealing on electrical and structural properties of Pt/Au Schottky contacts to n-type InP

By Bhaskar Reddy M.   Janardhanam V.   Ashok Kumar A.   Rajagopal Reddy V.   Narasimha Reddy P.   Choi Chel-Jong   Jung Ranju   Hur Sung  

Journal of Materials Science: Materials in Electronics, Vol. 21, Iss. 8, 2010-08 ,pp. : 804-810

Springer Publishing Company

Access to resources Recommend Favorite