Excellent silicon surface passivation using dimethylaluminium chloride as Al source for atomic layer deposited Al2O3

E-ISSN： 1862-6319|212|8|1795-1799

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.8, 2015-08, pp. : 1795-1799

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