Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM

Author: Armigliato A.   Balboni R.   Frabboni S.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|27|1-3|49-54

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 49-54

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Abstract