Influence of high-index GaAs substrates on the 2D electron density of δ-doped pHEMT with an additional InxGa1-xAs (x > 0.15) thin layer embedded in the channel

Author： Bouzaïene L.   Rekaya S.   Sfaxi L.   Maaref H.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|29|3|209-213

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.29, Iss.3, 2004-12, pp. : 209-213

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