Effect of leakage current induced by B+H+ implantation in the isolation process for self passivated GaAlAs/GaInP/ GaAs HBT

Author： Bourguiga R.   Sik H.   Scavennec A.   Bouchriha H.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|19|3|195-199

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.19, Iss.3, 2002-09, pp. : 195-199

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