Grown-in vacancy-type defects in poly- and single crystalline silicon investigated by positron annihilation

Author： Dannefaer S.   Avalos V.   Andersen O.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|37|2|213-218

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.37, Iss.2, 2007-01, pp. : 213-218

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