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Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements

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AlGaN/GaN/InGaN/GaN DH-HEMTs with GaN channel layer grown at high temperature

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Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

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Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy

By Ye Xiaoling   Chen Y. H.   Xu Bo   Zeng Y. P.   Wang Z. G.  

EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. : 297-300

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