Investigation on base surface recombination in Self Passivated GaAlAs/GaInP/GaAs Heterojunction Bipolar Transistor

By Bourguiga R.   Sik H.   Scavennec A.  

EPJ Applied Physics (The), Vol. 4, Iss. 1, 2010-03 ,pp. : 27-29

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Characterization and optimization of ion implantation for high spatial resolution quantum well intermixing in GaAs/AlGaAs superlattices

By Younis Usman   Holmes Barry M.   Hutchings David C.  

EPJ Applied Physics (The), Vol. 66, Iss. 1, 2014-04 ,pp. : 10101-10101

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I-V-T measurements on GaAs/AlGaAs heterojunctions interpreted on the basis of thermally assistedtunneling

By Sellai A.   Raven M. S.   Henini M.  

EPJ Applied Physics (The), Vol. 9, Iss. 2, 2010-03 ,pp. : 131-136

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Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy

By Aubry R.   Dua C.   Jacquet J.-C.   Lemaire F.   Galtier P.   Dessertenne B.   Cordier Y.   DiForte-Poisson M.-A.   Delage S. L.  

EPJ Applied Physics (The), Vol. 30, Iss. 2, 2005-03 ,pp. : 77-82

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In-depth analysis of the interfaces in InGaP/GaAs heterosystems

By Pelosi C.   Attolini G.   Frigeri C.   Bersani M.   Giubertoni D.   Vanzetti L.   Kudela R.  

EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. : 379-383

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