Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures

Author: Kamler G.   Borysiuk J.   Weyher J. L.   Presz A.   Woźniak M.   Grzegory I.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|27|1-3|247-249

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 247-249

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