Stacking faults in heavily nitrogen doped 4H-SiC

Author: Irmscher K.   Doerschel J.   Rost H. -J.   Schulz D.   Siche D.   Nerding M.   Strunk H. P.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|27|1-3|243-246

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 243-246

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Abstract