AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy

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Journal of Electronic Materials, Vol. 28, Iss. 8, 1999-08 ,pp. : 980-985

Springer Publishing Company

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Growth Parameters for Thin Film InBi Grown by Molecular Beam Epitaxy

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Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors

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Strain effects in CdTe (111) epitaxial layers grown on GaAs (100) substrates by molecular beam epitaxy

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