Author： Huang Mingmin Chen Xingbi
Publisher： IOP Publishing
E-ISSN： 1361-6641|30|10|105021-105031
ISSN： 0268-1242
Source： Semiconductor Science and Technology, Vol.30, Iss.10, 2015-10, pp. : 105021-105031
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Abstract
Several types of vertical power Schottky barrier diodes (SBDs) using a high-k (Hk) insulator, which have a low specific on-resistance (Ron) close to that of the superjunction (SJ) SBD with the same breakdown voltage (BV), are studied. By introducing an N+-poly-region in the Hk insulator at the anode side, the reverse leakage current of the Hk-SBD can be largely reduced without increasing the forward voltage drop. Simulation results based on Sentaurus show that, by using the N+-poly-region, the reverse leakage current of the 400 V Hk-SBD can be lowered by more than 40 times with Ron (=3.13 mΩ · cm2) equaling about eight times smaller than that of the conventional SBD having almost the same BV. It is also found that the reverse recovery behavior of the Hk-SBDs is much softer than that of the SJ-SBD.
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